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| MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon * Device Marking: 3EM Device Marking: Features http://onsemi.com * Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish 1 BASE COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol VCEO VCBO VEBO Value 25 30 3.0 Unit Vdc Vdc Vdc 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RJA PD 300 2.4 RJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C 556 mW mW/C C/W Max Unit 1 2 CASE 318 SOT-23 STYLE 6 ORDERING INFORMATION Device MMBTH10LT1 MMBTH10LT1G MMBTH10-4LT1 Package SOT-23 SOT-23 (Pb-Free) SOT-23 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2003 1 December, 2003 - Rev. 2 Publication Order Number: MMBTH10LT1/D MMBTH10LT1, MMBTH10-4LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 Adc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base-Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Common-Base Feedback Capacitance (VCB= 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC= 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) fT MMBTH10LT1 MMBTH10-4LT1 Ccb Crb rbCc 650 800 - - - - - - - - - - 0.7 0.65 9.0 pF pF ps MHz hFE MMBTH10LT1 MMBTH10-4LT1 VCE(sat) VBE 60 120 - - - - - - - 240 0.5 0.95 Vdc Vdc - V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 - - - - - - - - - - 100 100 Vdc Vdc Vdc nAdc nAdc Symbol Min Typ Max Unit http://onsemi.com 2 MMBTH10LT1, MMBTH10-4LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yib, INPUT ADMITTANCE 80 y ib , INPUT ADMITTANCE (mmhos) 70 60 -b ib jb ib (mmhos) 50 40 30 20 10 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 -50 -60 -20 -30 -40 1000 MHz 700 400 200 100 gib 0 -10 0 10 20 30 40 50 gib (mmhos) 60 70 80 Figure 1. Rectangular Form y ib , FORWARD TRANSFER ADMITTANCE (mmhos) Figure 2. Polar Form yfb, FORWARD TRANSFER ADMITTANCE 70 60 50 40 30 20 10 0 -10 -20 -30 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 10 70 60 50 40 10 30 20 gfb (mmhos) 0 -10 -20 -30 20 jb fb (mmhos) -g fb bfb 50 100 40 30 1000 MHz 60 200 400 600 700 Figure 3. Rectangular Form Figure 4. Polar Form http://onsemi.com 3 MMBTH10LT1, MMBTH10-4LT1 TYPICAL CHARACTERISTICS COMMON-BASE y PARAMETERS versus FREQUENCY (VCB = 10 Vdc, IC = 4.0 mAdc, TA = 25C) yrb, REVERSE TRANSFER ADMITTANCE y rb , REVERSE TRANSFER ADMITTANCE (mmhos) 5.0 4.0 3.0 -brb 2.0 1.0 MPS H10 -grb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 -5.0 -2.0 -1.8 -1.2 -0.8 -brb 0 100 MPS H11 jb rb (mmhos) -1.0 200 400 -2.0 -3.0 700 -4.0 1000 MHz 0 -0.4 0.4 grb (mmhos) 0.8 1.2 1.6 2.0 Figure 5. Rectangular Form yob, OUTPUT ADMITTANCE 10 yob, OUTPUT ADMITTANCE (mmhos) 9.0 8.0 7.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 500 f, FREQUENCY (MHz) gob 700 1000 2.0 100 0 0 2.0 jb ob(mmhos) 6.0 bob 6.0 8.0 700 10 Figure 6. Polar Form 1000 MHz 4.0 400 200 4.0 6.0 gob (mmhos) 8.0 10 Figure 7. Rectangular Form Figure 8. Polar Form http://onsemi.com 4 MMBTH10LT1, MMBTH10-4LT1 PACKAGE DIMENSIONS SOT-23 (TO-236AB) CASE 318-08 ISSUE AH A L 3 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-03 AND -07 OBSOLETE, NEW STANDARD 318-08. DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 BS V G C D H K J STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches Figure 9. SOT-23 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MMBTH10LT1, MMBTH10-4LT1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMBTH10LT1/D |
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